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All the VLSI engineers are aware that we are heading toward the bottleneck at the fabrication level. The three basic pillars namely Moore's law, Dennard's scaling, and Threshold reduction are reaching their minimum possible dimension. Hence CMOS technology needs to be aided by other research at both academic as well as industry level.
In this blog, we are discussing the novel non-volatile memory technologies that have the potential to actually provide feasible solutions for the von Neumann bottleneck today.
The non-volatile memory devices provide advantages because of the following characteristics:
Non-volatile
CMOS compatible
Ultra-low power requirement
Very high endurance
Sufficient speed
Also Read: Introduction to CMOS
The major memory devices developed to date are:
RRAM or resistive random access memory
PCRAM or phase change random access memory
OxRAM or oxide random access memory
FeRAM or ferroelectric random access memory
MRAM or magnetic random access memory
CBRAM or conductive bridging random access memory
Here is a brief comparison of all the memory technologies in tabular format.
These technologies have lead to the concept of "Computation within memory" which is the next major breakthrough upcoming in VLSI domain.
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