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• Define the geometry and dimensions of the DRAM cell according to advanced node technology.
• Use TCAD Sentaurus tools to create the layout and structure of the DRAM cell.
• Parameterize the material properties such as bandgap, mobility, and doping concentrations.
• Optimize process parameters to achieve desired device characteristics and dimensions.
• Perform variation analysis to understand the impact of process variations on DRAM performance.
• Validate the simulated results against theoretical models and experimental data.
Advanced Node DRAM Design and Simulation
• Simulation Reports: Comprehensive reports detailing the simulation setup, processes, results, and
analysis.
• Plots and Graphs: Visual representations of simulation data, including IV curves, threshold shifts,
retention characteristics, etc.
• Optimized Parameters: Recommendations for optimized design and operational parameters.
• Reliability and Performance Metrics: Documentation of reliability tests and key performance
metrics.
• Source Files: Simulation input files and scripts for reproducibility.