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The project aims to design and optimize FinFETs for low power applications using Sentaurus TCAD
software, focusing on reducing power consumption while maintaining performance.
• Create an initial FinFET model in Sentaurus TCAD, including Fin dimensions, gate material and
doping profiles.
• Configure the simulation environment.• Optimize parameters including threshold voltage, leakage current and power-performance trade-
off.• Analyze key performance and power consumption metrics.
• Explore advanced techniques such as Strain engineering, multi-gate designs and Fin geometry
optimization.
• Benchmark the optimized design against conventional MOSFETs and other FinFET designs.
Double Gate
• Simulation Reports: Comprehensive reports detailing the simulation setup, processes, results, and
analysis.
• Plots and Graphs: Visual representations of simulation data, including IV curves, threshold shifts,
retention characteristics, etc.
• Optimized Parameters: Recommendations for optimized design and operational parameters.
• Reliability and Performance Metrics: Documentation of reliability tests and key performance
metrics.
• Source Files: Simulation input files and scripts for reproducibility.