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This project aims to simulate and study the electrical performance of NSFETs, which are considered a
promising technology for future semiconductor devices. The focus will be on creating a detailed 3D model
of a nanosheet transistor and analyzing various electrical characteristics under different conditions.
• A detailed 3D model of a nanosheet transistor.
• Simulated electrical characteristics (Id-Vg and Id-Vd curves) of NSFETs.
• Analysis of the impact of various design parameters on device performance.
• Optimization strategies for enhancing the performance of NSFETs.
• A comprehensive report summarizing the findings and potential future directions.
Simulation of Nanosheet Field-Effect Transistors (NSFETs)
• Simulation Reports: Comprehensive reports detailing the simulation setup, processes, results, and
analysis.
• Plots and Graphs: Visual representations of simulation data, including IV curves, threshold shifts,
retention characteristics, etc.
• Optimized Parameters: Recommendations for optimized design and operational parameters.
• Reliability and Performance Metrics: Documentation of reliability tests and key performance
metrics.
• Source Files: Simulation input files and scripts for reproducibility.
